Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK2713

2SK2713

For Reference Only

Part Number 2SK2713
PNEDA Part # 2SK2713
Description MOSFET N-CH 450V 5A TO-220FN
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 3,240
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK2713 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part Number2SK2713
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK2713, 2SK2713 Datasheet (Total Pages: 5, Size: 151.82 KB)
PDF2SK2713 Datasheet Cover
2SK2713 Datasheet Page 2 2SK2713 Datasheet Page 3 2SK2713 Datasheet Page 4 2SK2713 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2SK2713 Datasheet
  • where to find 2SK2713
  • Rohm Semiconductor

  • Rohm Semiconductor 2SK2713
  • 2SK2713 PDF Datasheet
  • 2SK2713 Stock

  • 2SK2713 Pinout
  • Datasheet 2SK2713
  • 2SK2713 Supplier

  • Rohm Semiconductor Distributor
  • 2SK2713 Price
  • 2SK2713 Distributor

2SK2713 Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)450V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FN
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

TP0610KL-TR1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

270mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3nC @ 15V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-226AA

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

IPC90R1K0C3X1SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

DMT3009LFVWQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

3.8V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 14.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

823pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 35.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount, Wettable Flank

Supplier Device Package

PowerDI3333-8 (SWP) Type UX

Package / Case

8-PowerVDFN

TPH3206LSB

Transphorm

Manufacturer

Transphorm

Series

-

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 10A, 8V

Vgs(th) (Max) @ Id

2.6V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 4.5V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 480V

FET Feature

-

Power Dissipation (Max)

81W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (8x8)

Package / Case

3-PowerDFN

PMPB10XNEAX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

14mOhm @ 9A, 4.5V

Vgs(th) (Max) @ Id

0.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2.175nF @ 10V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta), 12.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN2020MD-6

Package / Case

6-UDFN Exposed Pad

Recently Sold

SI4836DY-T1-E3

SI4836DY-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 17A 8-SOIC

MADL-011021-14150T

MADL-011021-14150T

M/A-Com Technology Solutions

RF DIODE PIN 6TDFN

LBM2016T330J

LBM2016T330J

Taiyo Yuden

FIXED IND 33UH 125MA 3.6 OHM SMD

NJM2121M

NJM2121M

NJR Corporation/NJRC

IC OPAMP GP 2 CIRCUIT 8DMP

ABM3B-25.000MHZ-B2-T

ABM3B-25.000MHZ-B2-T

Abracon

CRYSTAL 25.0000MHZ 18PF SMD

IRFB13N50A

IRFB13N50A

Vishay Siliconix

MOSFET N-CH 500V 14A TO-220AB

3224W-1-105E

3224W-1-105E

Bourns

TRIMMER 1M OHM 0.25W J LEAD TOP

S29JL064J60TFI003

S29JL064J60TFI003

Cypress Semiconductor

IC FLASH 64M PARALLEL 48TSOP

ATMEGA128-16AU

ATMEGA128-16AU

Microchip Technology

IC MCU 8BIT 128KB FLASH 64TQFP

IRF9321TRPBF

IRF9321TRPBF

Infineon Technologies

MOSFET P-CH 30V 15A 8-SOIC

SMBJ14A-13-F

SMBJ14A-13-F

Diodes Incorporated

TVS DIODE 14V 23.2V SMB

LH1511BAB

LH1511BAB

Vishay Semiconductor Opto Division

SSR RELAY SPST-NC 200MA 0-200V