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2SK3309(Q)

2SK3309(Q)

For Reference Only

Part Number 2SK3309(Q)
PNEDA Part # 2SK3309-Q
Description MOSFET N-CH 450V 10A TO220FL
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 8,820
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK3309(Q) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SK3309(Q)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK3309(Q), 2SK3309(Q) Datasheet (Total Pages: 6, Size: 225.5 KB)
PDF2SK3309(TE24L Datasheet Cover
2SK3309(TE24L Datasheet Page 2 2SK3309(TE24L Datasheet Page 3 2SK3309(TE24L Datasheet Page 4 2SK3309(TE24L Datasheet Page 5 2SK3309(TE24L Datasheet Page 6

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2SK3309(Q) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)450V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds920pF @ 10V
FET Feature-
Power Dissipation (Max)65W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FL
Package / CaseTO-220-3, Short Tab

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