Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK3430(02)-S6-AZ

2SK3430(02)-S6-AZ

For Reference Only

Part Number 2SK3430(02)-S6-AZ
PNEDA Part # 2SK3430-02-S6-AZ
Description TRANSISTOR
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 8,424
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK3430(02)-S6-AZ Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part Number2SK3430(02)-S6-AZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2SK3430(02)-S6-AZ Datasheet
  • where to find 2SK3430(02)-S6-AZ
  • Renesas Electronics America

  • Renesas Electronics America 2SK3430(02)-S6-AZ
  • 2SK3430(02)-S6-AZ PDF Datasheet
  • 2SK3430(02)-S6-AZ Stock

  • 2SK3430(02)-S6-AZ Pinout
  • Datasheet 2SK3430(02)-S6-AZ
  • 2SK3430(02)-S6-AZ Supplier

  • Renesas Electronics America Distributor
  • 2SK3430(02)-S6-AZ Price
  • 2SK3430(02)-S6-AZ Distributor

2SK3430(02)-S6-AZ Specifications

ManufacturerRenesas Electronics America
Series-
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

760mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

97nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5140pF @ 25V

FET Feature

-

Power Dissipation (Max)

543W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS220

Package / Case

TO-220-3, Short Tab

IXKC13N80C

IXYS

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 25V

FET Feature

Super Junction

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS220™

Package / Case

ISOPLUS220™

APT8024LVRG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS V®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

240mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

425nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

7740pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-264 [L]

Package / Case

TO-264-3, TO-264AA

IPB06N03LA

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2653pF @ 15V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FQPF5N80

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.6Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 25V

FET Feature

-

Power Dissipation (Max)

47W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

Recently Sold

T520B227M006ATE070

T520B227M006ATE070

KEMET

CAP TANT POLY 220UF 6.3V 3528

HX5401NL

HX5401NL

Pulse Electronics Network

XFRMR MODL 4PORT POE GIGABIT

BYV26C-TAP

BYV26C-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1A SOD57

PIC16F876-20/SO

PIC16F876-20/SO

Microchip Technology

IC MCU 8BIT 14KB FLASH 28SOIC

MMBTA05-TP

MMBTA05-TP

Micro Commercial Co

TRANS NPN 60V 0.5A SOT23

ERJ-M1WSJ15MU

ERJ-M1WSJ15MU

Panasonic Electronic Components

RES 0.015 OHM 5% 1W 2512

SZNUP2105LT1G

SZNUP2105LT1G

ON Semiconductor

TVS DIODE 24V 44V SOT23-3

PIC18F2331-I/SO

PIC18F2331-I/SO

Microchip Technology

IC MCU 8BIT 8KB FLASH 28SOIC

MAX3208EAUB+T

MAX3208EAUB+T

Maxim Integrated

TVS DIODE 10UMAX

C0805C102K2GECAUTO

C0805C102K2GECAUTO

KEMET

CAP CER 0805 1NF 200V C0G 10%

PIC18F2423-I/SO

PIC18F2423-I/SO

Microchip Technology

IC MCU 8BIT 16KB FLASH 28SOIC

LTC4365IDDB#TRMPBF

LTC4365IDDB#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROTECT 8-DFN