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2SK3565(Q,M)

2SK3565(Q,M)

For Reference Only

Part Number 2SK3565(Q,M)
PNEDA Part # 2SK3565-Q-M
Description MOSFET N-CH 900V 5A TO-220SIS
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,328
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK3565(Q Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SK3565(Q,M)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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2SK3565(Q Specifications

ManufacturerToshiba Semiconductor and Storage
Seriesπ-MOSIV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1150pF @ 25V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

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