Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK3821-E

2SK3821-E

For Reference Only

Part Number 2SK3821-E
PNEDA Part # 2SK3821-E
Description MOSFET N-CH 100V 40A SMP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,106
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK3821-E Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number2SK3821-E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK3821-E, 2SK3821-E Datasheet (Total Pages: 4, Size: 98.22 KB)
PDF2SK3821-E Datasheet Cover
2SK3821-E Datasheet Page 2 2SK3821-E Datasheet Page 3 2SK3821-E Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2SK3821-E Datasheet
  • where to find 2SK3821-E
  • ON Semiconductor

  • ON Semiconductor 2SK3821-E
  • 2SK3821-E PDF Datasheet
  • 2SK3821-E Stock

  • 2SK3821-E Pinout
  • Datasheet 2SK3821-E
  • 2SK3821-E Supplier

  • ON Semiconductor Distributor
  • 2SK3821-E Price
  • 2SK3821-E Distributor

2SK3821-E Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs33mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs73nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4200pF @ 20V
FET Feature-
Power Dissipation (Max)1.65W (Ta), 65W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageSMP
Package / CaseTO-220-3, Short Tab

The Products You May Be Interested In

GKI03026

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

22A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 68A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4010pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 77W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6)

Package / Case

8-PowerTDFN

SIA472EDJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

20mOhm @ 10.8A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1265pF @ 15V

FET Feature

-

Power Dissipation (Max)

19.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6

IRF6893MTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

29A (Ta), 168A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.6mOhm @ 29A, 10V

Vgs(th) (Max) @ Id

2.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3480pF @ 13V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 69W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX

DMN10H220LQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

220mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

401pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

DMG1013UW-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

820mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

750mOhm @ 430mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.622nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

59.76pF @ 16V

FET Feature

-

Power Dissipation (Max)

310mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323

Package / Case

SC-70, SOT-323

Recently Sold

XC6SLX100-3CSG484I

XC6SLX100-3CSG484I

Xilinx

IC FPGA 338 I/O 484CSBGA

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

T491C107K016AT

T491C107K016AT

KEMET

CAP TANT 100UF 10% 16V 2312

SMCJ70CA-E3/57T

SMCJ70CA-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 70V 113V DO214AB

LT1129IQ#PBF

LT1129IQ#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 700MA 5DDPAK

STM32F103RCT6

STM32F103RCT6

STMicroelectronics

IC MCU 32BIT 256KB FLASH 64LQFP

NLC565050T-100K-PF

NLC565050T-100K-PF

TDK

FIXED IND 10UH 690MA 210 MOHM

J201

J201

ON Semiconductor

JFET N-CH 40V 0.625W TO92

HX2019NLT

HX2019NLT

Pulse Electronics Network

XFRMR MAGNT MOD 1PORT POE 10/100

P6KE16A

P6KE16A

Taiwan Semiconductor Corporation

TVS DIODE 13.6V 22.5V DO15

7427931

7427931

Wurth Electronics

FERRITE BEAD 91 OHM 2SMD 1LN

AD7908BRUZ

AD7908BRUZ

Analog Devices

IC ADC 8BIT SAR 20TSSOP