Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK3844(Q)

2SK3844(Q)

For Reference Only

Part Number 2SK3844(Q)
PNEDA Part # 2SK3844-Q
Description MOSFET N-CH 60V 45A TO220NIS
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK3844(Q) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SK3844(Q)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK3844(Q), 2SK3844(Q) Datasheet (Total Pages: 6, Size: 206.86 KB)
PDF2SK3844(Q) Datasheet Cover
2SK3844(Q) Datasheet Page 2 2SK3844(Q) Datasheet Page 3 2SK3844(Q) Datasheet Page 4 2SK3844(Q) Datasheet Page 5 2SK3844(Q) Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2SK3844(Q) Datasheet
  • where to find 2SK3844(Q)
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage 2SK3844(Q)
  • 2SK3844(Q) PDF Datasheet
  • 2SK3844(Q) Stock

  • 2SK3844(Q) Pinout
  • Datasheet 2SK3844(Q)
  • 2SK3844(Q) Supplier

  • Toshiba Semiconductor and Storage Distributor
  • 2SK3844(Q) Price
  • 2SK3844(Q) Distributor

2SK3844(Q) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 23A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs196nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12400pF @ 10V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220NIS
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

RJK6006DPD-00#J2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 25V

FET Feature

-

Power Dissipation (Max)

77.6W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MP-3A

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

AON2705_001

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

6-DFN (2x2)

Package / Case

6-WDFN Exposed Pad

FQAF5N90

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.3Ohm @ 2.05A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1550pF @ 25V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PF

Package / Case

TO-3P-3 Full Pack

FQP6N60

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 3.1A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 25V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IPU50R1K4CEAKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CE

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 900mA, 13V

Vgs(th) (Max) @ Id

3.5V @ 70µA

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

178pF @ 100V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

MT25QL128ABA8ESF-0SIT

MT25QL128ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 16SOP2

RUEF500

RUEF500

Littelfuse

PTC RESET FUSE 30V 5A RADIAL

M24M02-DRMN6TP

M24M02-DRMN6TP

STMicroelectronics

IC EEPROM 2M I2C 1MHZ 8SO

LTM4630AEY#PBF

LTM4630AEY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.3V

LTC6995IS6-1#TRMPBF

LTC6995IS6-1#TRMPBF

Linear Technology/Analog Devices

IC OSC SILICON PROG TSOT23-6

3214W-1-502E

3214W-1-502E

Bourns

TRIMMER 5K OHM 0.25W J LEAD TOP

LM137K

LM137K

STMicroelectronics

IC REG LINEAR NEG ADJ 1.5A TO3

SRP4020-2R2M

SRP4020-2R2M

Bourns

FIXED IND 2.2UH 3.9A 40 MOHM SMD

LTV-817S-TA1-A

LTV-817S-TA1-A

Lite-On Inc.

OPTOISOLATR 5KV TRANSISTOR 4-SMD

PHV-5R4V155-R

PHV-5R4V155-R

Eaton - Electronics Division

CAP 1.5F -10% +30% 5.4V T/H

PB5006-E3/45

PB5006-E3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT 1P 600V 45A PB

TAJD227K010RNJ

TAJD227K010RNJ

CAP TANT 220UF 10% 10V 2917