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2SK3868(Q,M)

2SK3868(Q,M)

For Reference Only

Part Number 2SK3868(Q,M)
PNEDA Part # 2SK3868-Q-M
Description MOSFET N-CH 500V 5A TO220SIS
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 3,456
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK3868(Q Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SK3868(Q,M)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK3868(Q, 2SK3868(Q Datasheet (Total Pages: 6, Size: 209.9 KB)
PDF2SK3868(Q Datasheet Cover
2SK3868(Q Datasheet Page 2 2SK3868(Q Datasheet Page 3 2SK3868(Q Datasheet Page 4 2SK3868(Q Datasheet Page 5 2SK3868(Q Datasheet Page 6

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2SK3868(Q Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.7Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

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