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4N32M

4N32M

For Reference Only

Part Number 4N32M
PNEDA Part # 4N32M
Description OPTOISO 4.17KV DARL W/BASE 6DIP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 313,442
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

4N32M Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number4N32M
CategorySemiconductorsIsolatorsOptoisolators - Transistor, Photovoltaic Output
Datasheet
4N32M, 4N32M Datasheet (Total Pages: 14, Size: 399.52 KB)
PDF4N29TVM Datasheet Cover
4N29TVM Datasheet Page 2 4N29TVM Datasheet Page 3 4N29TVM Datasheet Page 4 4N29TVM Datasheet Page 5 4N29TVM Datasheet Page 6 4N29TVM Datasheet Page 7 4N29TVM Datasheet Page 8 4N29TVM Datasheet Page 9 4N29TVM Datasheet Page 10 4N29TVM Datasheet Page 11

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4N32M Specifications

ManufacturerON Semiconductor
Series-
Number of Channels1
Voltage - Isolation4170Vrms
Current Transfer Ratio (Min)500% @ 10mA
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)5µs, 100µs (Max)
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeDarlington with Base
Voltage - Output (Max)30V
Current - Output / Channel150mA
Voltage - Forward (Vf) (Typ)1.2V
Current - DC Forward (If) (Max)80mA
Vce Saturation (Max)1V
Operating Temperature-40°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.300", 7.62mm)
Supplier Device Package6-DIP

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