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4N35(SHORT,F)

4N35(SHORT,F)

For Reference Only

Part Number 4N35(SHORT,F)
PNEDA Part # 4N35-SHORT-F
Description OPTOISO 2.5KV TRANS W/BASE 6DIP
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 9,504
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

4N35(SHORT Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number4N35(SHORT,F)
CategorySemiconductorsIsolatorsOptoisolators - Transistor, Photovoltaic Output
Datasheet
4N35(SHORT, 4N35(SHORT Datasheet (Total Pages: 6, Size: 333.09 KB)
PDF4N35(SHORT Datasheet Cover
4N35(SHORT Datasheet Page 2 4N35(SHORT Datasheet Page 3 4N35(SHORT Datasheet Page 4 4N35(SHORT Datasheet Page 5 4N35(SHORT Datasheet Page 6

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4N35(SHORT Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Number of Channels1
Voltage - Isolation2500Vrms
Current Transfer Ratio (Min)40% @ 10mA
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)3µs, 3µs
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeTransistor with Base
Voltage - Output (Max)30V
Current - Output / Channel100mA
Voltage - Forward (Vf) (Typ)1.15V
Current - DC Forward (If) (Max)60mA
Vce Saturation (Max)300mV
Operating Temperature-55°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.300", 7.62mm)
Supplier Device Package6-DIP

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