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4N35M

4N35M

For Reference Only

Part Number 4N35M
PNEDA Part # 4N35M
Description OPTOISO 4.17KV TRANS W/BASE 6DIP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 98,681
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

4N35M Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number4N35M
CategorySemiconductorsIsolatorsOptoisolators - Transistor, Photovoltaic Output
Datasheet
4N35M, 4N35M Datasheet (Total Pages: 13, Size: 398.34 KB)
PDFH11A4VM Datasheet Cover
H11A4VM Datasheet Page 2 H11A4VM Datasheet Page 3 H11A4VM Datasheet Page 4 H11A4VM Datasheet Page 5 H11A4VM Datasheet Page 6 H11A4VM Datasheet Page 7 H11A4VM Datasheet Page 8 H11A4VM Datasheet Page 9 H11A4VM Datasheet Page 10 H11A4VM Datasheet Page 11

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4N35M Specifications

ManufacturerON Semiconductor
Series-
Number of Channels1
Voltage - Isolation4170Vrms
Current Transfer Ratio (Min)100% @ 10mA
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)2µs, 2µs
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeTransistor with Base
Voltage - Output (Max)30V
Current - Output / Channel-
Voltage - Forward (Vf) (Typ)1.18V
Current - DC Forward (If) (Max)60mA
Vce Saturation (Max)300mV
Operating Temperature-40°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.300", 7.62mm)
Supplier Device Package6-DIP

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