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61070

61070

For Reference Only

Part Number 61070
PNEDA Part # 61070
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 5,760
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

61070 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part Number61070
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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61070 Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

5.5V

Frequency - Transition

21GHz

Noise Figure (dB Typ @ f)

0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz

Gain

12dB ~ 21dB

Power - Max

225mW

DC Current Gain (hFE) (Min) @ Ic, Vce

90 @ 10mA, 2V

Current - Collector (Ic) (Max)

60mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-343F

Supplier Device Package

4-DFP

75112

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Frequency - Transition

-

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Current - Collector (Ic) (Max)

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

PNP

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

5GHz

Noise Figure (dB Typ @ f)

3.3dB @ 500MHz

Gain

-

Power - Max

1W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 70mA, 10V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-243AA

Supplier Device Package

SOT-89-3

MS1701

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Frequency - Transition

-

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Current - Collector (Ic) (Max)

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

MDS800

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

65V

Frequency - Transition

1.09GHz

Noise Figure (dB Typ @ f)

-

Gain

8.6dB

Power - Max

1458W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 1A, 5V

Current - Collector (Ic) (Max)

60A

Operating Temperature

200°C (TJ)

Mounting Type

Chassis Mount

Package / Case

55ST-1

Supplier Device Package

55ST-1

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