66068B
For Reference Only
| Part Number | 66068B |
| PNEDA Part # | 66068B |
| Description | RF POWER TRANSISTOR |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 4,572 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
66068B Resources
| Brand | Microsemi |
| ECAD Module |
|
| Mfr. Part Number | 66068B |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 66068B Datasheet
- where to find 66068B
- Microsemi
- Microsemi 66068B
- 66068B PDF Datasheet
- 66068B Stock
- 66068B Pinout
- Datasheet 66068B
- 66068B Supplier
- Microsemi Distributor
- 66068B Price
- 66068B Distributor
66068B Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Current - Collector (Ic) (Max) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Broadcom Limited Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 5.5V Frequency - Transition - Noise Figure (dB Typ @ f) 1dB ~ 1.3dB @ 900MHz Gain 11dB ~ 12.5dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 2.7V Current - Collector (Ic) (Max) 32mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 550MHz Noise Figure (dB Typ @ f) 2.5dB @ 100MHz Gain 23dB Power - Max 100mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 125°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package S-Mini |
