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66082B

66082B

For Reference Only

Part Number 66082B
PNEDA Part # 66082B
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 2,160
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

66082B Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part Number66082B
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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66082B Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Manufacturer

Broadcom Limited

Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

-

Noise Figure (dB Typ @ f)

1dB ~ 1.9dB @ 900MHz ~ 2.4GHz

Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V

Current - Collector (Ic) (Max)

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Operating Temperature

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Mounting Type

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Package / Case

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Renesas Electronics America Inc.

Manufacturer

Renesas Electronics America Inc.

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Supplier Device Package

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Series

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Transistor Type

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Mounting Type

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Supplier Device Package

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