71016S20YG8
For Reference Only
| Part Number | 71016S20YG8 |
| PNEDA Part # | 71016S20YG8 |
| Description | IC SRAM 1M PARALLEL 44SOJ |
| Manufacturer | IDT, Integrated Device Technology |
| Unit Price | Request a Quote |
| In Stock | 2,610 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jul 18 - Jul 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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71016S20YG8 Resources
| Brand | IDT, Integrated Device Technology |
| ECAD Module |
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| Mfr. Part Number | 71016S20YG8 |
| Category | Semiconductors › Memory ICs › Memory |
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71016S20YG8 Specifications
| Manufacturer | IDT, Integrated Device Technology Inc |
| Series | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 1Mb (64K x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 20ns |
| Access Time | 20ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-BSOJ (0.400", 10.16mm Width) |
| Supplier Device Package | 44-SOJ |
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Manufacturer Cypress Semiconductor Corp Series - Memory Type Non-Volatile Memory Format NVSRAM Technology NVSRAM (Non-Volatile SRAM) Memory Size 256Kb (32K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 35ns Access Time 35ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Through Hole Package / Case 28-DIP (0.600", 15.24mm) Supplier Device Package 28-DIP |
Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format EPROM Technology EPROM - OTP Memory Size 4Mb (256K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page - Access Time 55ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature 0°C ~ 70°C (TC) Mounting Type Through Hole Package / Case 40-DIP (0.600", 15.24mm) Supplier Device Package 40-PDIP |
