71V416S10BEG
For Reference Only
| Part Number | 71V416S10BEG |
| PNEDA Part # | 71V416S10BEG |
| Description | IC SRAM 4M PARALLEL 48CABGA |
| Manufacturer | IDT, Integrated Device Technology |
| Unit Price | Request a Quote |
| In Stock | 7,200 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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71V416S10BEG Resources
| Brand | IDT, Integrated Device Technology |
| ECAD Module |
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| Mfr. Part Number | 71V416S10BEG |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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71V416S10BEG Specifications
| Manufacturer | IDT, Integrated Device Technology Inc |
| Series | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 4Mb (256K x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-CABGA (9x9) |
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR2 Memory Size 4Gb (128M x 32) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page - Access Time - Voltage - Supply 1.14V ~ 1.3V Operating Temperature -25°C ~ 85°C (TC) Mounting Type - Package / Case - Supplier Device Package - |
