AIGW40N65H5XKSA1
For Reference Only
| Part Number | AIGW40N65H5XKSA1 |
| PNEDA Part # | AIGW40N65H5XKSA1 |
| Description | IGBT 650V TO247-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,444 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AIGW40N65H5XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | AIGW40N65H5XKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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AIGW40N65H5XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, Trenchstop™ 5 |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 74A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| Power - Max | 250W |
| Switching Energy | 350µJ (on), 100µJ (off) |
| Input Type | Standard |
| Gate Charge | 95nC |
| Td (on/off) @ 25°C | 19ns/165ns |
| Test Condition | 400V, 20A, 15Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3-41 |
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 390V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) 50A Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A Power - Max 125W Switching Energy - Input Type Logic Gate Charge - Td (on/off) @ 25°C -/5µs Test Condition 300V, 9A, 1kOhm, 5V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK |
Manufacturer Renesas Electronics America Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 10A Power - Max 51W Switching Energy 230µJ (on), 160µJ (off) Input Type Standard Gate Charge 19.7nC Td (on/off) @ 25°C 31ns/54ns Test Condition 300V, 10A, 5Ohm, 15V Reverse Recovery Time (trr) 130ns Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252 |
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 16A Current - Collector Pulsed (Icm) 40A Vce(on) (Max) @ Vge, Ic 6V @ 15V, 10A Power - Max 150W Switching Energy 1.2mJ (off) Input Type Standard Gate Charge 65nC Td (on/off) @ 25°C 15ns/160ns Test Condition 1360V, 10A, 10Ohm, 15V Reverse Recovery Time (trr) 360ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD (IXBH) |
Manufacturer Infineon Technologies Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 30A Current - Collector Pulsed (Icm) 52A Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 15A Power - Max 198W Switching Energy 1.9mJ Input Type Standard Gate Charge 130nC Td (on/off) @ 25°C 18ns/580ns Test Condition 800V, 15A, 33Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package PG-TO220-3 |
