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AIHD04N60RATMA1

AIHD04N60RATMA1

For Reference Only

Part Number AIHD04N60RATMA1
PNEDA Part # AIHD04N60RATMA1
Description IC DISCRETE 600V TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,214
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AIHD04N60RATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAIHD04N60RATMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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AIHD04N60RATMA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)8A
Current - Collector Pulsed (Icm)12A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A
Power - Max75W
Switching Energy90µJ (on), 150µJ (off)
Input TypeStandard
Gate Charge27nC
Td (on/off) @ 25°C14ns/146ns
Test Condition400V, 4A, 43Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

17A

Current - Collector Pulsed (Icm)

34A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 16A

Power - Max

45W

Switching Energy

600µJ (on), 580µJ (off)

Input Type

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Gate Charge

67nC

Td (on/off) @ 25°C

60ns/160ns

Test Condition

480V, 16A, 23Ohm, 15V

Reverse Recovery Time (trr)

42ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

267nC

Td (on/off) @ 25°C

40ns/455ns

Test Condition

1500V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

706ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

i4-Pac™-5 (3 Leads)

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

140A

Current - Collector Pulsed (Icm)

225A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 75A

Power - Max

483W

Switching Energy

2.4mJ (on), 2.2mJ (off)

Input Type

Standard

Gate Charge

140nC

Td (on/off) @ 25°C

85ns/222ns

Test Condition

400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr)

90ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

SGL50N60RUFTU

ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 50A

Power - Max

250W

Switching Energy

1.68mJ (on), 1.03mJ (off)

Input Type

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Gate Charge

145nC

Td (on/off) @ 25°C

26ns/66ns

Test Condition

300V, 50A, 5.9Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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