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AIHD10N60RFATMA1

AIHD10N60RFATMA1

For Reference Only

Part Number AIHD10N60RFATMA1
PNEDA Part # AIHD10N60RFATMA1
Description IC DISCRETE 600V TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,238
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AIHD10N60RFATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAIHD10N60RFATMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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AIHD10N60RFATMA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)30A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 10A
Power - Max150W
Switching Energy190µJ (on), 160µJ (off)
Input TypeStandard
Gate Charge64nC
Td (on/off) @ 25°C12ns/168ns
Test Condition400V, 10A, 26Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3-313

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Test Condition

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

42ns

Operating Temperature

-55°C ~ 150°C (TJ)

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Td (on/off) @ 25°C

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