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AIHD10N60RFATMA1

AIHD10N60RFATMA1

For Reference Only

Part Number AIHD10N60RFATMA1
PNEDA Part # AIHD10N60RFATMA1
Description IC DISCRETE 600V TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,238
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 3 - Jun 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AIHD10N60RFATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAIHD10N60RFATMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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AIHD10N60RFATMA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)30A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 10A
Power - Max150W
Switching Energy190µJ (on), 160µJ (off)
Input TypeStandard
Gate Charge64nC
Td (on/off) @ 25°C12ns/168ns
Test Condition400V, 10A, 26Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3-313

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

31A

Current - Collector Pulsed (Icm)

124A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Power - Max

100W

Switching Energy

630µJ (on), 1.39mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

42ns/230ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

500W

Switching Energy

2.3mJ (on), 1.1mJ (off)

Input Type

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Gate Charge

220nC

Td (on/off) @ 25°C

15ns/110ns

Test Condition

600V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

112ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

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Power - Max

39W

Switching Energy

160µJ (on), 160µJ (off)

Input Type

Standard

Gate Charge

29nC

Td (on/off) @ 25°C

23ns/140ns

Test Condition

400V, 8A, 50Ohm, 15V

Reverse Recovery Time (trr)

95ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.37mJ (on), 250µJ (off)

Input Type

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Gate Charge

55.5nC

Td (on/off) @ 25°C

16.8ns/54.4ns

Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3PN

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