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AIKW50N65DF5XKSA1

AIKW50N65DF5XKSA1

For Reference Only

Part Number AIKW50N65DF5XKSA1
PNEDA Part # AIKW50N65DF5XKSA1
Description IC DISCRETE 650V TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,872
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AIKW50N65DF5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAIKW50N65DF5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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AIKW50N65DF5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, Trenchstop™ 5
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Power - Max270W
Switching Energy490µJ (on), 140µJ (off)
Input TypeStandard
Gate Charge1018nC
Td (on/off) @ 25°C21ns/156ns
Test Condition400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3-41

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IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

410A

Current - Collector Pulsed (Icm)

1100A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 100A

Power - Max

1560W

Switching Energy

5mJ (on), 4mJ (off)

Input Type

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Gate Charge

340nC

Td (on/off) @ 25°C

60ns/370ns

Test Condition

400V, 100A, 0Ohm, 15V

Reverse Recovery Time (trr)

108ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

140A

Current - Collector Pulsed (Icm)

225A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Power - Max

454W

Switching Energy

2.47mJ (on), 2.16mJ (off)

Input Type

Standard

Gate Charge

150nC

Td (on/off) @ 25°C

50ns/200ns

Test Condition

400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr)

155ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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APT15GN120KG

Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 15A

Power - Max

195W

Switching Energy

410µJ (on), 950µJ (off)

Input Type

Standard

Gate Charge

90nC

Td (on/off) @ 25°C

10ns/150ns

Test Condition

800V, 15A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

IXYS

Series

GenX3™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

250W

Switching Energy

540µJ (on), 800µJ (off)

Input Type

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Gate Charge

80nC

Td (on/off) @ 25°C

19ns/125ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

AOTF20B65M1

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

Alpha IGBT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.15V @ 15V, 20A

Power - Max

45W

Switching Energy

470µJ (on), 270µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

322ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

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