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AIKW50N65DH5XKSA1

AIKW50N65DH5XKSA1

For Reference Only

Part Number AIKW50N65DH5XKSA1
PNEDA Part # AIKW50N65DH5XKSA1
Description IC DISCRETE 650V TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,296
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AIKW50N65DH5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAIKW50N65DH5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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AIKW50N65DH5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, Trenchstop™ 5
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Power - Max270W
Switching Energy490µJ (on), 140µJ (off)
Input TypeStandard
Gate Charge1018nC
Td (on/off) @ 25°C21ns/156ns
Test Condition400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3-41

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

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Test Condition

400V, 30A, 11Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

32A

Current - Collector Pulsed (Icm)

36A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 12A

Power - Max

140W

Switching Energy

75µJ (on), 225µJ (off)

Input Type

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Gate Charge

25nC

Td (on/off) @ 25°C

31ns/83ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

89W

Switching Energy

300µJ (on), 300µJ (off)

Input Type

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Gate Charge

45nC

Td (on/off) @ 25°C

20ns/160ns

Test Condition

600V, 5A, 47Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 20A

Power - Max

125W

Switching Energy

560µJ (on), 130µJ (off)

Input Type

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Gate Charge

48nC

Td (on/off) @ 25°C

19ns/160ns

Test Condition

400V, 20A, 32Ohm, 15V

Reverse Recovery Time (trr)

80ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D²PAK (TO-263AB)

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 15A

Power - Max

48W

Switching Energy

270µJ (on), 230µJ (off)

Input Type

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Gate Charge

19nC

Td (on/off) @ 25°C

15ns/68ns

Test Condition

400V, 15A, 20Ohm, 15V

Reverse Recovery Time (trr)

30ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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