ALD1110ESAL
For Reference Only
| Part Number | ALD1110ESAL |
| PNEDA Part # | ALD1110ESAL |
| Description | MOSFET 2N-CH 10V 8SOIC |
| Manufacturer | Advanced Linear Devices Inc. |
| Unit Price | Request a Quote |
| In Stock | 3,978 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
ALD1110ESAL Resources
| Brand | Advanced Linear Devices Inc. |
| ECAD Module |
|
| Mfr. Part Number | ALD1110ESAL |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- ALD1110ESAL Datasheet
- where to find ALD1110ESAL
- Advanced Linear Devices Inc.
- Advanced Linear Devices Inc. ALD1110ESAL
- ALD1110ESAL PDF Datasheet
- ALD1110ESAL Stock
- ALD1110ESAL Pinout
- Datasheet ALD1110ESAL
- ALD1110ESAL Supplier
- Advanced Linear Devices Inc. Distributor
- ALD1110ESAL Price
- ALD1110ESAL Distributor
ALD1110ESAL Specifications
| Manufacturer | Advanced Linear Devices Inc. |
| Series | EPAD® |
| FET Type | 2 N-Channel (Dual) Matched Pair |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 10V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 5V |
| Vgs(th) (Max) @ Id | 1.01V @ 1µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2.5pF @ 5V |
| Power - Max | 600mW |
| Operating Temperature | 0°C ~ 70°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
The Products You May Be Interested In
|
Manufacturer Rohm Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V, 20V Current - Continuous Drain (Id) @ 25°C 1.4A, 1A Rds On (Max) @ Id, Vgs 240mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 70pF @ 10V Power - Max 1W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-SMD, Flat Leads Supplier Device Package TUMT6 |
Manufacturer IXYS Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 2 N-Channel (Dual) Matched Pair FET Feature Depletion Mode Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 500Ohm @ 3.6V Vgs(th) (Max) @ Id 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.7A Rds On (Max) @ Id, Vgs 15.5mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Toshiba Semiconductor and Storage Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
