AOB470L
For Reference Only
| Part Number | AOB470L |
| PNEDA Part # | AOB470L |
| Description | MOSFET N-CH 75V 10A TO263 |
| Manufacturer | Alpha & Omega Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,750 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 15 - Jun 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AOB470L Resources
| Brand | Alpha & Omega Semiconductor |
| ECAD Module |
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| Mfr. Part Number | AOB470L |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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Logistics Mode
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AOB470L Specifications
| Manufacturer | Alpha & Omega Semiconductor Inc. |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 10.2mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 136nC @ 10V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 5640pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 268W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D²Pak) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 64mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 260pF @ 10V FET Feature - Power Dissipation (Max) 800mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-563/SCH6 Package / Case SOT-563, SOT-666 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 140W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
