Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

AOD3N50_004

AOD3N50_004

For Reference Only

Part Number AOD3N50_004
PNEDA Part # AOD3N50_004
Description MOSFET N-CH 500V 2.8A TO252
Manufacturer Alpha & Omega Semiconductor
Unit Price Request a Quote
In Stock 8,712
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AOD3N50_004 Resources

Brand Alpha & Omega Semiconductor
ECAD Module ECAD
Mfr. Part NumberAOD3N50_004
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • AOD3N50_004 Datasheet
  • where to find AOD3N50_004
  • Alpha & Omega Semiconductor

  • Alpha & Omega Semiconductor AOD3N50_004
  • AOD3N50_004 PDF Datasheet
  • AOD3N50_004 Stock

  • AOD3N50_004 Pinout
  • Datasheet AOD3N50_004
  • AOD3N50_004 Supplier

  • Alpha & Omega Semiconductor Distributor
  • AOD3N50_004 Price
  • AOD3N50_004 Distributor

AOD3N50_004 Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds331pF @ 25V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

110V

Current - Continuous Drain (Id) @ 25°C

30.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

25mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 25V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack, Isolated Tab

US5U38TR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

390mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TUMT5

Package / Case

6-SMD (5 Leads), Flat Lead

AUIRFSA8409-7TRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

523A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

0.69mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

460nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13975pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK (7-Lead)

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

IPU05N03LA G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3110pF @ 15V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

P-TO251-3-1

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

1900A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 1600A, 10V

Vgs(th) (Max) @ Id

5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

2900nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

Y3-Li

Package / Case

Y3-Li

Recently Sold

LT1963AEST-3.3#TRPBF

LT1963AEST-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A SOT223-3

ADM2484EBRWZ

ADM2484EBRWZ

Analog Devices

DGTL ISO 5KV RS422/RS485 16SOIC

CY8C5868AXI-LP035

CY8C5868AXI-LP035

Cypress Semiconductor

IC MCU 32BIT 256KB FLASH 100TQFP

M27C512-15F1

M27C512-15F1

STMicroelectronics

IC EPROM 512K PARALLEL 28CDIP

TCS3200D-TR

TCS3200D-TR

ams

IC COLOR SENSOR LIGHT-FREQ 8SOIC

USB3340-EZK-TR

USB3340-EZK-TR

Microchip Technology

IC TRANSCEIVER 1/1 32QFN

74HC123D

74HC123D

Toshiba Semiconductor and Storage

IC MULTIVIBRATR DUAL MONO 16SOIC

UC3844BD1013TR

UC3844BD1013TR

STMicroelectronics

IC REG CTRLR BST FLYBK ISO 8SOIC

MC9S12HZ256VAL

MC9S12HZ256VAL

NXP

IC MCU 16BIT 256KB FLASH 112LQFP

AT28C16-15TC

AT28C16-15TC

Microchip Technology

IC EEPROM 16K PARALLEL 28TSOP

TAJD337K010RNJ

TAJD337K010RNJ

CAP TANT 330UF 10% 10V 2917

HEDS-5500#F04

HEDS-5500#F04

Broadcom

ROTARY ENCODER OPTICAL 256PPR