AON6448L
For Reference Only
| Part Number | AON6448L |
| PNEDA Part # | AON6448L |
| Description | MOSFET N-CH 80V 8DFN |
| Manufacturer | Alpha & Omega Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,532 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AON6448L Resources
| Brand | Alpha & Omega Semiconductor |
| ECAD Module |
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| Mfr. Part Number | AON6448L |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
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Notes
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AON6448L Specifications
| Manufacturer | Alpha & Omega Semiconductor Inc. |
| Series | SDMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 40V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN-EP (5x6) |
| Package / Case | 8-PowerVDFN |
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 91A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1760pF @ 12V FET Feature - Power Dissipation (Max) 61W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 15.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 90mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 920pF @ 100V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8 Package / Case 8-PowerTDFN |
