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AOU3N60

AOU3N60

For Reference Only

Part Number AOU3N60
PNEDA Part # AOU3N60
Description MOSFET N-CH 600V 2.5A IPAK
Manufacturer Alpha & Omega Semiconductor
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AOU3N60 Resources

Brand Alpha & Omega Semiconductor
ECAD Module ECAD
Mfr. Part NumberAOU3N60
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
AOU3N60, AOU3N60 Datasheet (Total Pages: 6, Size: 276.87 KB)
PDFAOU3N60_001 Datasheet Cover
AOU3N60_001 Datasheet Page 2 AOU3N60_001 Datasheet Page 3 AOU3N60_001 Datasheet Page 4 AOU3N60_001 Datasheet Page 5 AOU3N60_001 Datasheet Page 6

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AOU3N60 Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds370pF @ 25V
FET Feature-
Power Dissipation (Max)56.8W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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