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APT1001R1BN

APT1001R1BN

For Reference Only

Part Number APT1001R1BN
PNEDA Part # APT1001R1BN
Description MOSFET N-CH 1000V 10.5A TO247AD
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 6,480
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT1001R1BN Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT1001R1BN
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
APT1001R1BN, APT1001R1BN Datasheet (Total Pages: 4, Size: 52.1 KB)
PDFAPT1001R1BN Datasheet Cover
APT1001R1BN Datasheet Page 2 APT1001R1BN Datasheet Page 3 APT1001R1BN Datasheet Page 4

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APT1001R1BN Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS IV®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.1Ohm @ 5.25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2950pF @ 25V
FET Feature-
Power Dissipation (Max)310W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD
Package / CaseTO-247-3

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