APT1001R1BN
For Reference Only
| Part Number | APT1001R1BN |
| PNEDA Part # | APT1001R1BN |
| Description | MOSFET N-CH 1000V 10.5A TO247AD |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 6,480 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APT1001R1BN Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APT1001R1BN |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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APT1001R1BN Specifications
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS IV® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5.25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD |
| Package / Case | TO-247-3 |
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