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APT10M11B2VFRG

APT10M11B2VFRG

For Reference Only

Part Number APT10M11B2VFRG
PNEDA Part # APT10M11B2VFRG
Description MOSFET N-CH 100V 100A T-MAX
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 5,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT10M11B2VFRG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT10M11B2VFRG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
APT10M11B2VFRG, APT10M11B2VFRG Datasheet (Total Pages: 4, Size: 66.26 KB)
PDFAPT10M11B2VFRG Datasheet Cover
APT10M11B2VFRG Datasheet Page 2 APT10M11B2VFRG Datasheet Page 3 APT10M11B2VFRG Datasheet Page 4

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APT10M11B2VFRG Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS V®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs450nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds10300pF @ 25V
FET Feature-
Power Dissipation (Max)520W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageT-MAX™
Package / CaseTO-247-3 Variant

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