Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APT12080JVR

APT12080JVR

For Reference Only

Part Number APT12080JVR
PNEDA Part # APT12080JVR
Description MOSFET N-CH 1200V 15A ISOTOP
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 2,322
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 9 - Jul 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT12080JVR Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT12080JVR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
APT12080JVR, APT12080JVR Datasheet (Total Pages: 4, Size: 205.72 KB)
PDFAPT12080JVR Datasheet Cover
APT12080JVR Datasheet Page 2 APT12080JVR Datasheet Page 3 APT12080JVR Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APT12080JVR Datasheet
  • where to find APT12080JVR
  • Microsemi

  • Microsemi APT12080JVR
  • APT12080JVR PDF Datasheet
  • APT12080JVR Stock

  • APT12080JVR Pinout
  • Datasheet APT12080JVR
  • APT12080JVR Supplier

  • Microsemi Distributor
  • APT12080JVR Price
  • APT12080JVR Distributor

APT12080JVR Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS V®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs485nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7800pF @ 25V
FET Feature-
Power Dissipation (Max)450W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageISOTOP®
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

SIB415DK-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

87mOhm @ 4.17A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.05nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

295pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 13W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-75-6L Single

Package / Case

PowerPAK® SC-75-6L

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

96mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

FET Feature

-

Power Dissipation (Max)

540W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AA

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

CPH6354-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-CPH

Package / Case

SOT-23-6 Thin, TSOT-23-6

IPB039N04LGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2V @ 45µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6100pF @ 25V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AOT2N60

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.4nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

325pF @ 25V

FET Feature

-

Power Dissipation (Max)

74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

AOZ8808DI-05

AOZ8808DI-05

Alpha & Omega Semiconductor

TVS DIODE 5V 9V 10DFN

BC807-25,215

BC807-25,215

Nexperia

TRANS PNP 45V 0.5A SOT23

MCP6002-E/SN

MCP6002-E/SN

Microchip Technology

IC OPAMP GP 2 CIRCUIT 8SOIC

WSL120600000ZEA9

WSL120600000ZEA9

Vishay Dale

RES 0 OHM JUMPER 1206

EL5211IYEZ-T13

EL5211IYEZ-T13

Renesas Electronics America Inc.

IC OPAMP VFB 2 CIRCUIT 8HMSOP

XU208-128-TQ64-C10

XU208-128-TQ64-C10

XMOS

IC MCU 32BIT ROMLESS 64TQFP

V7-7B17D8-201

V7-7B17D8-201

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION SPDT 11A 125V

SMBJ14CA

SMBJ14CA

Littelfuse

TVS DIODE 14V 23.2V DO214AA

SMAJ24A

SMAJ24A

Littelfuse

TVS DIODE 24V 38.9V DO214AC

ISL99227IRZ

ISL99227IRZ

Renesas Electronics America Inc.

IC MODULE SPS 3.3V 32-PQFN

C8051F120-GQR

C8051F120-GQR

Silicon Labs

IC MCU 8BIT 128KB FLASH 100TQFP

BZV55C5V1

BZV55C5V1

Microsemi

DIODE ZENER 5.1V DO213AA