Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APT25GN120B2DQ2G

APT25GN120B2DQ2G

For Reference Only

Part Number APT25GN120B2DQ2G
PNEDA Part # APT25GN120B2DQ2G
Description IGBT 1200V 67A 272W TMAX
Manufacturer Microsemi
Unit Price
1 ---------- $80.6825
50 ---------- $76.9005
100 ---------- $73.1185
200 ---------- $69.3365
400 ---------- $66.1849
500 ---------- $63.0332
In Stock 2,224
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT25GN120B2DQ2G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT25GN120B2DQ2G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APT25GN120B2DQ2G Datasheet
  • where to find APT25GN120B2DQ2G
  • Microsemi

  • Microsemi APT25GN120B2DQ2G
  • APT25GN120B2DQ2G PDF Datasheet
  • APT25GN120B2DQ2G Stock

  • APT25GN120B2DQ2G Pinout
  • Datasheet APT25GN120B2DQ2G
  • APT25GN120B2DQ2G Supplier

  • Microsemi Distributor
  • APT25GN120B2DQ2G Price
  • APT25GN120B2DQ2G Distributor

APT25GN120B2DQ2G Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeNPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)67A
Current - Collector Pulsed (Icm)75A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 25A
Power - Max272W
Switching Energy2.15µJ (off)
Input TypeStandard
Gate Charge155nC
Td (on/off) @ 25°C22ns/280ns
Test Condition800V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device Package-

The Products You May Be Interested In

IRG4RC10UPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

8.5A

Current - Collector Pulsed (Icm)

34A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 5A

Power - Max

38W

Switching Energy

80µJ (on), 160µJ (off)

Input Type

Standard

Gate Charge

15nC

Td (on/off) @ 25°C

19ns/116ns

Test Condition

480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-Pak

IRG8B08N120KDPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

15A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 5A

Power - Max

89W

Switching Energy

300µJ (on), 300µJ (off)

Input Type

Standard

Gate Charge

45nC

Td (on/off) @ 25°C

20ns/160ns

Test Condition

600V, 5A, 47Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

IRG4PH40UPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

41A

Current - Collector Pulsed (Icm)

82A

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 21A

Power - Max

160W

Switching Energy

1.04mJ (on), 3.4mJ (off)

Input Type

Standard

Gate Charge

86nC

Td (on/off) @ 25°C

24ns/220ns

Test Condition

960V, 21A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

RGT00TS65DGC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

85A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Power - Max

277W

Switching Energy

-

Input Type

Standard

Gate Charge

94nC

Td (on/off) @ 25°C

42ns/137ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

54ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247N

IRG4BC20KDPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

32A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 9A

Power - Max

60W

Switching Energy

340µJ (on), 300µJ (off)

Input Type

Standard

Gate Charge

34nC

Td (on/off) @ 25°C

54ns/180ns

Test Condition

480V, 9A, 50Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Recently Sold

TS30013-M050QFNR

TS30013-M050QFNR

Semtech

IC REG BUCK 5V 3A 16QFN

SI8233BB-D-IS

SI8233BB-D-IS

Silicon Labs

DGTL ISO 2.5KV GATE DRVR 16SOIC

AUIRF1010ZS

AUIRF1010ZS

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

4TPE220MAZB

4TPE220MAZB

Panasonic Electronic Components

CAP TANT POLY 220UF 4V 1411

MB95F698KPMC-G-SNE2

MB95F698KPMC-G-SNE2

Cypress Semiconductor

IC MCU 8BIT 60KB FLASH 48LQFP

TN2124K1-G

TN2124K1-G

Microchip Technology

MOSFET N-CH 240V 0.134A SOT23-3

MD2369A

MD2369A

Central Semiconductor Corp

TRANS 2NPN 40V 0.5A TO-78

FSA5157L6X

FSA5157L6X

ON Semiconductor

IC SWITCH SPDT 6MICROPAK

LK115D33-TR

LK115D33-TR

STMicroelectronics

IC REG LINEAR 3.3V 100MA 8SO

IHLP2525CZERR47M01

IHLP2525CZERR47M01

Vishay Dale

FIXED IND 470NH 17.5A 4.2 MOHM

H1102NLT

H1102NLT

Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

MCP6566UT-E/OT

MCP6566UT-E/OT

Microchip Technology

IC COMPARATOR O-D 1.8V SOT23-5