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APT30GP60BG

APT30GP60BG

For Reference Only

Part Number APT30GP60BG
PNEDA Part # APT30GP60BG
Description IGBT 600V 100A 463W TO247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 2,574
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT30GP60BG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT30GP60BG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT30GP60BG Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 30A
Power - Max463W
Switching Energy260µJ (on), 250µJ (off)
Input TypeStandard
Gate Charge90nC
Td (on/off) @ 25°C13ns/55ns
Test Condition400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 [B]

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Current - Collector (Ic) (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Test Condition

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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TO-247-3

Supplier Device Package

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IXYS

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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