Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APT30M85BVRG

APT30M85BVRG

For Reference Only

Part Number APT30M85BVRG
PNEDA Part # APT30M85BVRG
Description MOSFET N-CH 300V 40A TO-247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 3,816
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT30M85BVRG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT30M85BVRG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APT30M85BVRG Datasheet
  • where to find APT30M85BVRG
  • Microsemi

  • Microsemi APT30M85BVRG
  • APT30M85BVRG PDF Datasheet
  • APT30M85BVRG Stock

  • APT30M85BVRG Pinout
  • Datasheet APT30M85BVRG
  • APT30M85BVRG Supplier

  • Microsemi Distributor
  • APT30M85BVRG Price
  • APT30M85BVRG Distributor

APT30M85BVRG Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS V®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs85mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs195nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4950pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 [B]
Package / CaseTO-247-3

The Products You May Be Interested In

ZVN2120GTC

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

320mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

85pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

AOC2421

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 2.5V

Rds On (Max) @ Id, Vgs

62mOhm @ 1.5A, 2.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 4.5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

752pF @ 4V

FET Feature

-

Power Dissipation (Max)

600mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-AlphaDFN (0.97x0.97)

Package / Case

4-SMD, No Lead

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

70mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9.4nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 25V

FET Feature

-

Power Dissipation (Max)

56W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

PMPB43XPE,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

48mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23.4nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1550pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta), 12.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN2020MD-6

Package / Case

6-UDFN Exposed Pad

IRL3715ZSTRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 10V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

VRF150MP

VRF150MP

Microsemi

RF MOSFET N-CHANNEL 50V M174

CK45-R3DD102KAVRA

CK45-R3DD102KAVRA

TDK

CAP CER 1000PF 2KV RADIAL

MAX3002EUP+

MAX3002EUP+

Maxim Integrated

IC TRNSLTR BIDIRECTIONAL 20TSSOP

ADM6318CY46ARJZ-R7

ADM6318CY46ARJZ-R7

Analog Devices

IC SUPERVISOR W/RESET SOT23-5

MIC2025-1YM

MIC2025-1YM

Microchip Technology

IC SW DISTRIBUTION 1CHAN 8SOIC

ADUM7641CRQZ

ADUM7641CRQZ

Analog Devices

DGTL ISO 1KV 6CH GEN PURP 20QSOP

DM74LS05N

DM74LS05N

ON Semiconductor

IC INVERTER 6CH 1-INP 14DIP

PIC18F65J15-I/PT

PIC18F65J15-I/PT

Microchip Technology

IC MCU 8BIT 48KB FLASH 64TQFP

BAT54T1G

BAT54T1G

ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOD123

SMBJ6V5A

SMBJ6V5A

Taiwan Semiconductor Corporation

TVS DIODE 6.5V 11.2V DO214AA

AT49F040-12TI

AT49F040-12TI

Microchip Technology

IC FLASH 4M PARALLEL 32TSOP

MIC94043YFL-TR

MIC94043YFL-TR

Microchip Technology

IC LOAD SW HISIDE 3A 4-MLF