APT45GP120B2DQ2G
For Reference Only
| Part Number | APT45GP120B2DQ2G |
| PNEDA Part # | APT45GP120B2DQ2G |
| Description | IGBT 1200V 113A 625W TMAX |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 8,622 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APT45GP120B2DQ2G Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APT45GP120B2DQ2G |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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APT45GP120B2DQ2G Specifications
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 113A |
| Current - Collector Pulsed (Icm) | 170A |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A |
| Power - Max | 625W |
| Switching Energy | 900µJ (on), 905µJ (off) |
| Input Type | Standard |
| Gate Charge | 185nC |
| Td (on/off) @ 25°C | 18ns/100ns |
| Test Condition | 600V, 45A, 5Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Supplier Device Package | - |
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