APT50GN60BDQ2G
For Reference Only
| Part Number | APT50GN60BDQ2G |
| PNEDA Part # | APT50GN60BDQ2G |
| Description | IGBT 600V 107A 366W TO247 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 3,436 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APT50GN60BDQ2G Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APT50GN60BDQ2G |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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APT50GN60BDQ2G Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 107A |
| Current - Collector Pulsed (Icm) | 150A |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 50A |
| Power - Max | 366W |
| Switching Energy | 1185µJ (on), 1565µJ (off) |
| Input Type | Standard |
| Gate Charge | 325nC |
| Td (on/off) @ 25°C | 20ns/230ns |
| Test Condition | 400V, 50A, 4.3Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
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Manufacturer IXYS Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 70A Current - Collector Pulsed (Icm) 140A Vce(on) (Max) @ Vge, Ic 4V @ 15V, 35A Power - Max 300W Switching Energy 10mJ (off) Input Type Standard Gate Charge 150nC Td (on/off) @ 25°C 80ns/400ns Test Condition 960V, 35A, 2.7Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD (IXSH) |
