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APT50GP60B2DQ2G

APT50GP60B2DQ2G

For Reference Only

Part Number APT50GP60B2DQ2G
PNEDA Part # APT50GP60B2DQ2G
Description IGBT 600V 150A 625W TMAX
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 6,228
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT50GP60B2DQ2G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT50GP60B2DQ2G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT50GP60B2DQ2G Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)150A
Current - Collector Pulsed (Icm)190A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 50A
Power - Max625W
Switching Energy465µJ (on), 635µJ (off)
Input TypeStandard
Gate Charge165nC
Td (on/off) @ 25°C19ns/85ns
Test Condition400V, 50A, 4.3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device Package-

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

360V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

88A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

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Power - Max

500W

Switching Energy

1.38mJ (on), 906µJ (off)

Input Type

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Gate Charge

210nC

Td (on/off) @ 25°C

22ns/163ns

Test Condition

600V, 40A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

-

Reverse Recovery Time (trr)

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

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STMicroelectronics

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Series

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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