Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APT56M60B2

APT56M60B2

For Reference Only

Part Number APT56M60B2
PNEDA Part # APT56M60B2
Description MOSFET N-CH 600V 56A T-MAX
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 6,084
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT56M60B2 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT56M60B2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APT56M60B2 Datasheet
  • where to find APT56M60B2
  • Microsemi

  • Microsemi APT56M60B2
  • APT56M60B2 PDF Datasheet
  • APT56M60B2 Stock

  • APT56M60B2 Pinout
  • Datasheet APT56M60B2
  • APT56M60B2 Supplier

  • Microsemi Distributor
  • APT56M60B2 Price
  • APT56M60B2 Distributor

APT56M60B2 Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 8™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 28A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs280nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds11300pF @ 25V
FET Feature-
Power Dissipation (Max)1040W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 [B]
Package / CaseTO-247-3 Variant

The Products You May Be Interested In

SPN03N60C3

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

700mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

3.9V @ 135µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

STP75N75F4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

78A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 39A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

76nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5015pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

NTK3043NAT5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

210mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.65V, 4.5V

Rds On (Max) @ Id, Vgs

3.4Ohm @ 10mA, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

11pF @ 10V

FET Feature

-

Power Dissipation (Max)

310mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-723

Package / Case

SOT-723

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

310mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1134pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 Isolated Tab

Package / Case

TO-220-3 Full Pack, Isolated Tab

NTMFS4H01NFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

54A (Ta), 334A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

0.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

82nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5538pF @ 12V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 125W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

Recently Sold

LAN8740AI-EN

LAN8740AI-EN

Microchip Technology

IC TRANSCEIVER FULL 1/1 32SQFN

B540C-13-F

B540C-13-F

Diodes Incorporated

DIODE SCHOTTKY 40V 5A SMC

MPZ2012S300AT000

MPZ2012S300AT000

TDK

FERRITE BEAD 30 OHM 0805 1LN

MM74C923WM

MM74C923WM

ON Semiconductor

IC ENCODER 20-KEY 20-SOIC

BAS40-04-7-F

BAS40-04-7-F

Diodes Incorporated

DIODE ARRAY SCHOTTKY 40V SOT23-3

U6264BDC07LLG1

U6264BDC07LLG1

Alliance Memory, Inc.

IC SRAM 64K PARALLEL 28DIP

LTST-C171KRKT

LTST-C171KRKT

Lite-On Inc.

LED RED CLEAR SMD

MIC49150WR

MIC49150WR

Microchip Technology

IC REG LIN POS ADJ 1.5A SPAK-5

LT1112IS8#TRPBF

LT1112IS8#TRPBF

Linear Technology/Analog Devices

IC OPAMP GP 2 CIRCUIT 8SO

DS3232SN#

DS3232SN#

Maxim Integrated

IC RTC CLK/CALENDAR I2C 20-SOIC

PBSS4250X,115

PBSS4250X,115

Nexperia

TRANS NPN 50V 2A SOT89

LTV-817S-TA1-D

LTV-817S-TA1-D

Lite-On Inc.

OPTOISOLATR 5KV TRANSISTOR 4-SMD