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APT60GT60BRG

APT60GT60BRG

For Reference Only

Part Number APT60GT60BRG
PNEDA Part # APT60GT60BRG
Description IGBT 600V 100A 500W TO247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 25,242
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT60GT60BRG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT60GT60BRG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT60GT60BRG Specifications

ManufacturerMicrosemi Corporation
SeriesThunderbolt IGBT®
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)360A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 60A
Power - Max500W
Switching Energy3.4mJ
Input TypeStandard
Gate Charge275nC
Td (on/off) @ 25°C26ns/395ns
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 [B]

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

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Power - Max

150W

Switching Energy

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Input Type

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Gate Charge

57nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

11A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 4A

Power - Max

58W

Switching Energy

140µJ (on), 62µJ (off)

Input Type

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Gate Charge

9nC

Td (on/off) @ 25°C

27ns/120ns

Test Condition

400V, 1.5A, 100Ohm, 15V

Reverse Recovery Time (trr)

48ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

32W

Switching Energy

85µJ (on), 189µJ (off)

Input Type

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Gate Charge

53nC

Td (on/off) @ 25°C

25ns/97ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

31ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

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Power - Max

238W

Switching Energy

138µJ (on), 52µJ (off)

Input Type

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Gate Charge

80nC

Td (on/off) @ 25°C

16.4ns/86.4ns

Test Condition

400V, 10A, 6Ohm, 15V

Reverse Recovery Time (trr)

31.8ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

IRG4BC20FD-STRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

250µJ (on), 640µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

43ns/240ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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