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APT68GA60LD40

APT68GA60LD40

For Reference Only

Part Number APT68GA60LD40
PNEDA Part # APT68GA60LD40
Description IGBT 600V 121A 520W TO-264
Manufacturer Microsemi
Unit Price
1 ---------- $109.2483
50 ---------- $104.1272
100 ---------- $99.0062
200 ---------- $93.8852
400 ---------- $89.6177
500 ---------- $85.3502
In Stock 193
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT68GA60LD40 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT68GA60LD40
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT68GA60LD40 Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 8™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)121A
Current - Collector Pulsed (Icm)202A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 40A
Power - Max520W
Switching Energy715µJ (on), 607µJ (off)
Input TypeStandard
Gate Charge198nC
Td (on/off) @ 25°C21ns/133ns
Test Condition400V, 40A, 4.7Ohm, 15V
Reverse Recovery Time (trr)22ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264 [L]

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

900µJ (on), 3.8mJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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IRG4BC30SPBF

Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

480V, 18A, 23Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

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Manufacturer

IXYS

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

76nC

Td (on/off) @ 25°C

-

Test Condition

600V, 25A, 39Ohm, 15V

Reverse Recovery Time (trr)

350ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Alpha & Omega Semiconductor

Manufacturer

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Series

Alpha IGBT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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