APT94N65B2C3G
For Reference Only
| Part Number | APT94N65B2C3G |
| PNEDA Part # | APT94N65B2C3G |
| Description | MOSFET N-CH 650V 94A TO-247 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 2,700 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APT94N65B2C3G Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APT94N65B2C3G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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APT94N65B2C3G Specifications
| Manufacturer | Microsemi Corporation |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 94A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 47A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 5.8mA |
| Gate Charge (Qg) (Max) @ Vgs | 580nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13940pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 833W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | T-MAX™ [B2] |
| Package / Case | TO-247-3 Variant |
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Manufacturer Series NexFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 200A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7930pF @ 50V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DDPAK/TO-263-3 Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
