Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APT97N65LC6

APT97N65LC6

For Reference Only

Part Number APT97N65LC6
PNEDA Part # APT97N65LC6
Description MOSFET N-CH 650V 97A TO-264
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,140
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT97N65LC6 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT97N65LC6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APT97N65LC6 Datasheet
  • where to find APT97N65LC6
  • Microsemi

  • Microsemi APT97N65LC6
  • APT97N65LC6 PDF Datasheet
  • APT97N65LC6 Stock

  • APT97N65LC6 Pinout
  • Datasheet APT97N65LC6
  • APT97N65LC6 Supplier

  • Microsemi Distributor
  • APT97N65LC6 Price
  • APT97N65LC6 Distributor

APT97N65LC6 Specifications

ManufacturerMicrosemi Corporation
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs41mOhm @ 48.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 2.96mA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7650pF @ 25V
FET Feature-
Power Dissipation (Max)862W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264 [L]
Package / CaseTO-264-3, TO-264AA

The Products You May Be Interested In

C2M1000170D

Cree/Wolfspeed

Manufacturer

Cree/Wolfspeed

Series

Z-FET™

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1700V

Current - Continuous Drain (Id) @ 25°C

4.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 2A, 20V

Vgs(th) (Max) @ Id

2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 20V

Vgs (Max)

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds

191pF @ 1000V

FET Feature

-

Power Dissipation (Max)

69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

STY100NS20FD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MESH OVERLAY™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

24mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

360nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7900pF @ 25V

FET Feature

-

Power Dissipation (Max)

450W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

MAX247™

Package / Case

TO-247-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

45.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

42mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1770pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRF1018ESTRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

79A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.4mOhm @ 47A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2290pF @ 50V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FQP6N80

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.95Ohm @ 2.9A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

FET Feature

-

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Recently Sold

FA-20H 12.0000MD30Z-K3

FA-20H 12.0000MD30Z-K3

EPSON

CRYSTAL 12.00 MHZ 10.0PF SMD

1N4007G

1N4007G

ON Semiconductor

DIODE GEN PURP 1KV 1A DO41

HCM0703-4R7-R

HCM0703-4R7-R

Eaton - Electronics Division

FIXED IND 4.7UH 5.5A 40 MOHM SMD

NC7SZ08P5X

NC7SZ08P5X

ON Semiconductor

IC GATE AND 1CH 2-INP SC70-5

NP5Q128A13ESFC0E

NP5Q128A13ESFC0E

Micron Technology Inc.

IC PCM 128M SPI 66MHZ 16SO W

MCIMX6G1CVM05AA

MCIMX6G1CVM05AA

NXP

IC MPU I.MC6UL 528MHZ 289BGA

M29W640FB70N6E

M29W640FB70N6E

Micron Technology Inc.

IC FLASH 64M PARALLEL 48TSOP

SBR05U20LPS-7

SBR05U20LPS-7

Diodes Incorporated

DIODE SBR 20V 500MA 2DFN

YC324-JK-072KL

YC324-JK-072KL

Yageo

RES ARRAY 4 RES 2K OHM 2012

SP3232EEN-L/TR

SP3232EEN-L/TR

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

4608X-101-153LF

4608X-101-153LF

Bourns

RES ARRAY 7 RES 15K OHM 8SIP

TEMT1020

TEMT1020

Vishay Semiconductor Opto Division

SENSOR PHOTO 880NM TOP VIEW 2SMD