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APTC80H29T1G

APTC80H29T1G

For Reference Only

Part Number APTC80H29T1G
PNEDA Part # APTC80H29T1G
Description MOSFET 4N-CH 800V 15A SP1
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 2,970
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTC80H29T1G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTC80H29T1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
APTC80H29T1G, APTC80H29T1G Datasheet (Total Pages: 6, Size: 324.5 KB)
PDFAPTC80H29T1G Datasheet Cover
APTC80H29T1G Datasheet Page 2 APTC80H29T1G Datasheet Page 3 APTC80H29T1G Datasheet Page 4 APTC80H29T1G Datasheet Page 5 APTC80H29T1G Datasheet Page 6

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APTC80H29T1G Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type4 N-Channel (H-Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C15A
Rds On (Max) @ Id, Vgs290mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2254pF @ 25V
Power - Max156W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP1
Supplier Device PackageSP1

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