APTGT75DA120T1G
For Reference Only
| Part Number | APTGT75DA120T1G |
| PNEDA Part # | APTGT75DA120T1G |
| Description | IGBT 1200V 110A 357W SP1 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 2,286 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APTGT75DA120T1G Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APTGT75DA120T1G |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Modules |
| Datasheet |
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APTGT75DA120T1G Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| IGBT Type | Trench Field Stop |
| Configuration | Single |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 110A |
| Power - Max | 357W |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| Current - Collector Cutoff (Max) | 250µA |
| Input Capacitance (Cies) @ Vce | 5.34nF @ 25V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP1 |
| Supplier Device Package | SP1 |
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