Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APTM100UM45DAG

APTM100UM45DAG

For Reference Only

Part Number APTM100UM45DAG
PNEDA Part # APTM100UM45DAG
Description MOSFET N-CH 1000V 215A SP6
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 7,974
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTM100UM45DAG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTM100UM45DAG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APTM100UM45DAG Datasheet
  • where to find APTM100UM45DAG
  • Microsemi

  • Microsemi APTM100UM45DAG
  • APTM100UM45DAG PDF Datasheet
  • APTM100UM45DAG Stock

  • APTM100UM45DAG Pinout
  • Datasheet APTM100UM45DAG
  • APTM100UM45DAG Supplier

  • Microsemi Distributor
  • APTM100UM45DAG Price
  • APTM100UM45DAG Distributor

APTM100UM45DAG Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C215A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs52mOhm @ 107.5A, 10V
Vgs(th) (Max) @ Id5V @ 30mA
Gate Charge (Qg) (Max) @ Vgs1602nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds42700pF @ 25V
FET Feature-
Power Dissipation (Max)5000W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP6
Package / CaseSP6

The Products You May Be Interested In

VS-FC270SA20

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

287A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 200A, 10V

Vgs(th) (Max) @ Id

4.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

16500pF @ 100V

FET Feature

-

Power Dissipation (Max)

937W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC

AOK60N30L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

56mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

106nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5330pF @ 25V

FET Feature

-

Power Dissipation (Max)

658W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

R6024ENZ1C9

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 11.3A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1650pF @ 25V

FET Feature

-

Power Dissipation (Max)

120W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

FCH47N60-F133

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

FQD4P40TM-AM002

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.1Ohm @ 1.35A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

LT1529IQ#PBF

LT1529IQ#PBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 3A 5DDPAK

L6563H

L6563H

STMicroelectronics

IC PFC CTRLR TRANSITION 16SOIC

MC9S12C128CFUE

MC9S12C128CFUE

NXP

IC MCU 16BIT 128KB FLASH 80QFP

B3S-1000P

B3S-1000P

Omron Electronics Inc-EMC Div

SWITCH TACTILE SPST-NO 0.05A 24V

EPM1270F256I5N

EPM1270F256I5N

Intel

IC CPLD 980MC 6.2NS 256FBGA

MLX90615SSG-DAG-000-TU

MLX90615SSG-DAG-000-TU

Melexis Technologies NV

SENSOR DGTL -40C-85C TO46-4

XC7Z030-1FBG676I

XC7Z030-1FBG676I

Xilinx

IC SOC CORTEX-A9 667MHZ 676FCBGA

AO3407A

AO3407A

Alpha & Omega Semiconductor

MOSFET P-CH 30V 4.3A SOT23

TMMDB3

TMMDB3

STMicroelectronics

DIAC 28-36V 2A MINIMELF

MCP73862T-I/SL

MCP73862T-I/SL

Microchip Technology

IC LI-ION CTRLR 8.2/8.4V 16SOIC

MC74HC00AD

MC74HC00AD

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

EKXG401ELL820MM25S

EKXG401ELL820MM25S

United Chemi-Con

CAP ALUM 82UF 20% 400V RADIAL