APTM100VDA35T3G
For Reference Only
| Part Number | APTM100VDA35T3G |
| PNEDA Part # | APTM100VDA35T3G |
| Description | MOSFET 2N-CH 1000V 22A SP3 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 8,712 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 27 - May 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APTM100VDA35T3G Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APTM100VDA35T3G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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APTM100VDA35T3G Specifications
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 22A |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 25V |
| Power - Max | 390W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Supplier Device Package | SP3 |
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