APTM10DSKM19T3G
For Reference Only
| Part Number | APTM10DSKM19T3G |
| PNEDA Part # | APTM10DSKM19T3G |
| Description | MOSFET 2N-CH 100V 70A SP3 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 6,246 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
APTM10DSKM19T3G Resources
| Brand | Microsemi |
| ECAD Module |
|
| Mfr. Part Number | APTM10DSKM19T3G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- APTM10DSKM19T3G Datasheet
- where to find APTM10DSKM19T3G
- Microsemi
- Microsemi APTM10DSKM19T3G
- APTM10DSKM19T3G PDF Datasheet
- APTM10DSKM19T3G Stock
- APTM10DSKM19T3G Pinout
- Datasheet APTM10DSKM19T3G
- APTM10DSKM19T3G Supplier
- Microsemi Distributor
- APTM10DSKM19T3G Price
- APTM10DSKM19T3G Distributor
APTM10DSKM19T3G Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 70A |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| Power - Max | 208W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Supplier Device Package | SP3 |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series PowerTrench® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 350mA Rds On (Max) @ Id, Vgs 1.2Ohm @ 350mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 100pF @ 10V Power - Max 446mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SOT-563F |
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) Asymmetrical FET Feature Standard Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V, 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 6V, 3700pF @ 6V Power - Max 27W (Tc), 48W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual Asymmetric |
Manufacturer STMicroelectronics Series STripFET™ III FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A, 5.4A Rds On (Max) @ Id, Vgs 22mOhm @ 4A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 857pF @ 25V Power - Max 2W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 4.2A Rds On (Max) @ Id, Vgs 36mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA Rds On (Max) @ Id, Vgs 4Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 7.8pF @ 3V Power - Max 150mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package ES6 (1.6x1.6) |
