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APTM120A80FT1G

APTM120A80FT1G

For Reference Only

Part Number APTM120A80FT1G
PNEDA Part # APTM120A80FT1G
Description MOSFET 2N-CH 1200V 14A SP1
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 2,898
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTM120A80FT1G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTM120A80FT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
APTM120A80FT1G, APTM120A80FT1G Datasheet (Total Pages: 5, Size: 139.33 KB)
PDFAPTM120A80FT1G Datasheet Cover
APTM120A80FT1G Datasheet Page 2 APTM120A80FT1G Datasheet Page 3 APTM120A80FT1G Datasheet Page 4 APTM120A80FT1G Datasheet Page 5

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APTM120A80FT1G Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C14A
Rds On (Max) @ Id, Vgs960mOhm @ 12A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds6696pF @ 25V
Power - Max357W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP1
Supplier Device PackageSP1

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