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APTM120DA30CT1G

APTM120DA30CT1G

For Reference Only

Part Number APTM120DA30CT1G
PNEDA Part # APTM120DA30CT1G
Description MOSFET N-CH 1200V 31A SP1
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,338
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTM120DA30CT1G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTM120DA30CT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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APTM120DA30CT1G Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 8™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 25A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs560nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds14560pF @ 25V
FET Feature-
Power Dissipation (Max)657W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP1
Package / CaseSP1

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