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APTM120DDA57T3G

APTM120DDA57T3G

For Reference Only

Part Number APTM120DDA57T3G
PNEDA Part # APTM120DDA57T3G
Description MOSFET 2N-CH 1200V 17A SP3
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,680
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTM120DDA57T3G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTM120DDA57T3G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
APTM120DDA57T3G, APTM120DDA57T3G Datasheet (Total Pages: 6, Size: 291.21 KB)
PDFAPTM120DDA57T3G Datasheet Cover
APTM120DDA57T3G Datasheet Page 2 APTM120DDA57T3G Datasheet Page 3 APTM120DDA57T3G Datasheet Page 4 APTM120DDA57T3G Datasheet Page 5 APTM120DDA57T3G Datasheet Page 6

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APTM120DDA57T3G Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C17A
Rds On (Max) @ Id, Vgs684mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5155pF @ 25V
Power - Max390W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

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