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APTM120SK56T1G

APTM120SK56T1G

For Reference Only

Part Number APTM120SK56T1G
PNEDA Part # APTM120SK56T1G
Description MOSFET N-CH 1200V 18A SP1
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,838
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTM120SK56T1G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTM120SK56T1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
APTM120SK56T1G, APTM120SK56T1G Datasheet (Total Pages: 6, Size: 450.96 KB)
PDFAPTM120SK56T1G Datasheet Cover
APTM120SK56T1G Datasheet Page 2 APTM120SK56T1G Datasheet Page 3 APTM120SK56T1G Datasheet Page 4 APTM120SK56T1G Datasheet Page 5 APTM120SK56T1G Datasheet Page 6

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APTM120SK56T1G Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs672mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7736pF @ 25V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP1
Package / CaseSP1

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