Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APTM120U10DAG

APTM120U10DAG

For Reference Only

Part Number APTM120U10DAG
PNEDA Part # APTM120U10DAG
Description MOSFET N-CH 1200V 116A SP6
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 6,696
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTM120U10DAG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTM120U10DAG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
APTM120U10DAG, APTM120U10DAG Datasheet (Total Pages: 6, Size: 216.66 KB)
PDFAPTM120U10DAG Datasheet Cover
APTM120U10DAG Datasheet Page 2 APTM120U10DAG Datasheet Page 3 APTM120U10DAG Datasheet Page 4 APTM120U10DAG Datasheet Page 5 APTM120U10DAG Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APTM120U10DAG Datasheet
  • where to find APTM120U10DAG
  • Microsemi

  • Microsemi APTM120U10DAG
  • APTM120U10DAG PDF Datasheet
  • APTM120U10DAG Stock

  • APTM120U10DAG Pinout
  • Datasheet APTM120U10DAG
  • APTM120U10DAG Supplier

  • Microsemi Distributor
  • APTM120U10DAG Price
  • APTM120U10DAG Distributor

APTM120U10DAG Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs120mOhm @ 58A, 10V
Vgs(th) (Max) @ Id5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs1100nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds28900pF @ 25V
FET Feature-
Power Dissipation (Max)3290W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP6
Package / CaseSP6

The Products You May Be Interested In

FDMS8848NZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

22.8A (Ta), 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.1mOhm @ 22.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

152nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8075pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

STL8N80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

16.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 100V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6)

Package / Case

8-PowerVDFN

AOT1404L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 220A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 417W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

SIR184DP-T1-RE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20.7A (Ta), 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

5.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1490pF @ 30V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

BUK929R1-60EJ

Nexperia

Manufacturer

Nexperia USA Inc.

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

HX2305NL

HX2305NL

Pulse Electronics Network

XFRMR MODUL 2PORT POE 1:1 10/100

SR1LARU

SR1LARU

STMicroelectronics

IC SMART RESET 4PIN 6.0S 6UDFN

CMS05(TE12L,Q,M)

CMS05(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

MCP6566UT-E/OT

MCP6566UT-E/OT

Microchip Technology

IC COMPARATOR O-D 1.8V SOT23-5

RB496EATR

RB496EATR

Rohm Semiconductor

DIODE ARRAY SCHOTTKY 20V TSMD5

IRG4BC20KDSTRRP

IRG4BC20KDSTRRP

Infineon Technologies

IGBT 600V 16A 60W D2PAK

FT245RL-REEL

FT245RL-REEL

FTDI, Future Technology Devices International Ltd

IC USB TO PARALLEL FIFO 28-SSOP

SUD40N08-16-E3

SUD40N08-16-E3

Vishay Siliconix

MOSFET N-CH 80V 40A TO252

MAX809SEUR+T

MAX809SEUR+T

Maxim Integrated

IC MPU/RESET CIRC SOT23-3

T495D337K006ATE040

T495D337K006ATE040

KEMET

CAP TANT 330UF 10% 6.3V 2917

B320A-13-F

B320A-13-F

Diodes Incorporated

DIODE SCHOTTKY 20V 3A SMA

DS5000-32-16+

DS5000-32-16+

Maxim Integrated

IC MCU 8BIT 32KB NVSRAM 40EDIP