Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APTM120UM95FAG

APTM120UM95FAG

For Reference Only

Part Number APTM120UM95FAG
PNEDA Part # APTM120UM95FAG
Description MOSFET N-CH 1200V 103A SP6
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 6,642
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTM120UM95FAG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTM120UM95FAG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
APTM120UM95FAG, APTM120UM95FAG Datasheet (Total Pages: 6, Size: 275.8 KB)
PDFAPTM120UM95FAG Datasheet Cover
APTM120UM95FAG Datasheet Page 2 APTM120UM95FAG Datasheet Page 3 APTM120UM95FAG Datasheet Page 4 APTM120UM95FAG Datasheet Page 5 APTM120UM95FAG Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APTM120UM95FAG Datasheet
  • where to find APTM120UM95FAG
  • Microsemi

  • Microsemi APTM120UM95FAG
  • APTM120UM95FAG PDF Datasheet
  • APTM120UM95FAG Stock

  • APTM120UM95FAG Pinout
  • Datasheet APTM120UM95FAG
  • APTM120UM95FAG Supplier

  • Microsemi Distributor
  • APTM120UM95FAG Price
  • APTM120UM95FAG Distributor

APTM120UM95FAG Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs114mOhm @ 51.5A, 10V
Vgs(th) (Max) @ Id5V @ 15mA
Gate Charge (Qg) (Max) @ Vgs1122nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds30900pF @ 25V
FET Feature-
Power Dissipation (Max)2272W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP6
Package / CaseSP6

The Products You May Be Interested In

DMG7N65SCT

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

886pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

IXYS

Series

TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

260A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10800pF @ 25V

FET Feature

-

Power Dissipation (Max)

480W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

STL3NK40

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

430mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.5Ohm @ 220mA, 10V

Vgs(th) (Max) @ Id

2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFLAT™ (5x5)

Package / Case

8-PowerVDFN

FQPF3N40

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.4Ohm @ 800mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

230pF @ 25V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

VN2410L-G-P014

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

190mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

10Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

125pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Recently Sold

MAX1953EUB+

MAX1953EUB+

Maxim Integrated

IC REG CTRLR BUCK 10UMAX

FHAC0001ZXJ

FHAC0001ZXJ

Littelfuse

FUSE HLDR BLADE 32V 20A IN LINE

CB3LV-3I-30M0000

CB3LV-3I-30M0000

CTS Frequency Controls

XTAL OSC XO 30.0000MHZ HCMOS TTL

LV8727-E

LV8727-E

ON Semiconductor

IC MTR DRVR BIPOLAR 0V-5V 25HZIP

2920L330/24MR

2920L330/24MR

Littelfuse

PTC RESET FUSE 24V 3.3A 2920

DS2781E+T&R

DS2781E+T&R

Maxim Integrated

IC FUEL GAUGE BATT 8TSSOP

APT8024JLL

APT8024JLL

Microsemi

MOSFET N-CH 800V 29A SOT-227

ISL3330IAZ

ISL3330IAZ

Renesas Electronics America Inc.

IC TRANSCEIVER FULL 2/2 20SSOP

SF-1206F200-2

SF-1206F200-2

Bourns

FUSE BOARD MOUNT 2A 63VDC 1206

BAT41ZFILM

BAT41ZFILM

STMicroelectronics

DIODE SCHOTTKY 100V 200MA SOD123

2SC4793(F,M)

2SC4793(F,M)

Toshiba Semiconductor and Storage

TRANS NPN 230V 1A TO220NIS

LM1458M

LM1458M

ON Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC